g ? sic ? technology ultrabright? leds c xxx -ub29 x -s0100 f e a t u r e s a p p l i c a t i o n s ? ultrabright? perform a nce ? 3.8m w m i n (460nm ) deep blue ? 3.4m w m i n (470nm ) blue ? 2.5m w m i n (505nm ) signal green ? 1.7m w m i n (527nm ) green ? sorted to w a velength and power bins ? single w i re bond structure ? class ii esd rating ? led video displays ? w h ite leds ? autom o tive dashboard lighting ? cellular phone backlighting ? audio product display lighting description cree' s ub? series of ultrabright? leds com b ine highly efficient ingan m a terials with cree' s proprietary sic? substrate to deliver excellent price perform a nce for high intensity blue and green leds. ultrabright led chips are available in a geom etrically enhanced vertical structure or a straight-wall design for use in reflector-less applications such as chipleds. both require only a single wire bond connection. sorted die kits provide die sheets conveni ently sorted into wavelength and radiant flux bins. cree' s ub series chips are individually tested for c onform ity to optical and electrical specifications and the ability to withstand 1000v esd. these leds are us eful in a broad range of applications such as outdoor and indoor full m o tion led video signs, transpor tation signaling and white leds, yet can also be used in high volum e applications such as lcd backlighting. cree' s cb series chips are com p atible with m o st radial and smt led assem b ly processes. c xxx -ub29 x -s0100 chip diagram t o ps i d e v i ew 30 0 x 30 0 m me s a ( j un c t i o n ) 24 0 x 24 0 m go l d b o nd p a d 114 m d i am et er ca t h o d e ( - ) an o d e ( + ) h = 25 0 m back si d e m e tal l i zat ion in g a n si c s u bst r a t e d i e c r os s s ecti o n (u b290) g si c ? le d ch i p s t raigh t - w all d e sign ( u b 2 91 ) si c subs t r at e in ga n cpr3ag rev. f ? 2000- 2003 cr ee, i n c. all rights reser v ed.
g ? sic ? technology ultrabright? leds c xxx -ub29 x -s0100 maximum ratings at t a = 25c notes 1&3 c xxx -ub29 x -s0100 dc forward current 30 m a peak forward current (1/10 duty cycle @ 1khz) 100 m a led junction tem p erature 125c reverse voltage 5 v operating tem p erature range -20c to +80c storage tem p erature range -30c to +100c electrostatic discharge threshold (hbm) note 2 1 0 0 0 v electrostatic discharge classification (mil-std-883e) note 2 c l a s s 2 typical electrical/optical characteristics at t a = 25c, if = 20ma note 3 part num b er for w ar d voltage (v f, v) rev e rse cu rren t [ i(vr=5 v ), a] peak w a velength ( p, nm ) half width ( d, nm ) optical rise tim e ( , n s ) t y p m a x m a x t y p t y p t y p c460ub29 x - s 0 1 0 0 3. 5 3. 9 1 0 4 5 8 2 6 3 0 c470ub29 x - s 0 1 0 0 3. 5 3. 9 1 0 4 6 8 2 6 3 0 c505ub29 x - s 0 1 0 0 3. 5 3. 9 1 0 5 0 2 3 0 3 0 c527ub29 x - s 0 1 0 0 3. 5 3. 9 1 0 5 1 8 3 6 3 0 mechanical specifications note 4 c xxx -ub29 x - s 0 1 0 0 d e s c r i p t i o n d i m e n s i o n t o l e r a n c e p-n junction area (m ) 240 x 240 25 top area (m ) 300 x 300 25 ub290 bottom area (m ) 200 x 200 25 ub291 bottom area (m ) 300 x 300 25 chip thickness (m ) 250 25 au bond pad diam eter (m ) 114 20 au bond pad thickness (m ) 1.2 0.5 notes: 1) m a xim u m r a tings ar e package dependent. t h e above r a tings we r e deter m ined using a t - 1 3/4 package ( w ith hy sol os4000 epoxy ) f o r characterization. ratings for other packages m a y differ . t h e for w ar d cur r e nts ( d c and peak) are not lim ited by the die but by the ef f ect of the l e d junction tem p er atur e on the package. t h e junction tem p er atur e lim it of 125 c is a lim it of the t - 1 3/4 package; junction tem p er atur e should be char acter iz ed in a specif i c package to determ ine lim itations. assem b ly processing tem p er ature m u st not exceed 350c (< 15 m i nutes). 2) product resistance to electrostatic discharge (esd) according to the hbm is m easured by sim u lating esd using a rapid avalanc h e en erg y test (raet). th e raet procedures are designed to a pproxim a te the m a xim u m esd ratings shown. the raet procedure is perf orm e d on each die. the e sd classif i cation of class ii is based on sam p le testing according to mil-std 883e. 3) all pr oducts confor m to the listed m i nim u m and m a xim u m specifi cations for electr i cal and optical char acter istics, when assem bled and oper a ted at 20 m a within the m a xim u m r a tings shown above. e fficiency decr eases at higher cur r e nts. t y pical values given ar e within the r a nge of average values expected by the m a nufacturer in large quantities a nd are provided for inform ation onl y. all m easurem ents were m a de using lam p s in t-1 3/4 packa ges ( w ith hy sol os4000 epoxy ) . optical char acter istics wer e m easur ed in a photor esear ch spectr a scan i n tegr ating spher e . i llum i nance e . 4) specifications ar e subject to change without notice. cpr3ag rev. f ? 2000- 2003 cr ee, i n c. all rights reser v ed.
g ? sic ? technology ultrabright? leds c xxx -ub29 x -s0100 standard bins for ub290: all led chips are sorted onto di e sheets according to the bins shown bel o w. 460u b 290- 0103 460u b 290- 0104 c 460u b 290- s0100 460u b 290- 0101 460u b 290- 0102 470u b 290- 0103 470u b 290- 0104 c 470u b 290- s0100 470u b 290- 0101 470u b 290- 0102 505u b 290- 0103 505u b 290- 0104 c 505u b 290- s0100 505u b 290- 0101 505u b 290- 0102 c 527u b 290- s0100 527u b 290- 0104 527u b 290- 0105 527u b 290- 0106 527u b 290- 0101 527u b 290- 0102 527u b 290- 0103 535n m 470n m 475n m 510n m 520n m 525n m 530n m 500n m 505n m 1.7m w 3.5m w 2.5m w 7.5m w 6.0m w 5.0m w 465n m 5.5m w 4.0m w s o rt ed di e ki t s m a y co n t ai n an y o r al l bins s how n to the le f t . 465n m 3.8m w 3.4m w 455n m 8.0m w 460n m 6.0m w cpr3ag rev. f ? 2000- 2003 cr ee, i n c. all rights reser v ed.
g ? sic ? technology ultrabright? leds c xxx -ub29 x -s0100 standard bins for ub291: all led chips are sorted onto di e sheets according to the bins shown bel o w. 460u b 291- 0105 460u b 291- 0106 460u b 291- 0103 460u b 291- 0104 c 460u b 291- s0100 460u b 291- 0101 460u b 291- 0102 470u b 291- 0107 470u b 291- 0108 470u b 291- 0105 470u b 291- 0106 c 470u b 291- s0100 470u b 291- 0101 470u b 291- 0103 505u b 291- 0103 505u b 291- 0104 c 505u b 291- s0100 505u b 291- 0101 505u b 291- 0102 c 527u b 291- s0100 527u b 291- 0104 527u b 291- 0105 527u b 291- 0106 527u b 291- 0101 527u b 291- 0102 527u b 291- 0103 535n m 470n m 475n m 510n m 520n m 525n m 530n m 500n m 505n m 1.7m w 3.5m w 2.5m w 7.5m w 6.0m w 5.0m w 465n m 5.5m w 4.0m w s o rt ed di e ki t s m a y co n t ai n an y o r al l bins s how n to the le f t . 465n m 3.8m w 3.4m w 455n m 11.0m w 10.0m w 8.0m w 460n m 6.0m w cpr3ag rev. f ? 2000- 2003 cr ee, i n c. all rights reser v ed.
cpr3ag rev. f ? 2000- 2003 cr ee, i n c. all rights reser v ed. g ? sic ? technology ultrabright? leds c xxx -ub29 x -s0100 characteristic curves w a v e l e ng t h shi f t v s for w a r d c u r r e nt - a l l pr o d u c t s -4 .0 -2 .0 0. 0 2. 0 4. 0 6. 0 8. 0 10 . 0 12 . 0 14 . 0 16 . 0 0 5 10 15 20 2 5 30 if ( m a ) sh if t (n m ) 5 27n m 5 05n m 4 70n m re la t i ve in t e n s it y vs f o r w a r d c u rr e n t - a ll p r o d u c t s 0. 0 20 . 0 40 . 0 60 . 0 80 . 0 10 0. 0 12 0. 0 14 0. 0 0 5 10 15 2 0 25 3 0 if ( m a ) % r e lativ e in ten s ity v s w a v e len g th - all p r o d u c ts 0% 20 % 40 % 60 % 80 % 10 0% w a v e le n g t h (n m ) re la tiv e inte ns ity (%) 500 fo r w a r d cu r r e nt v s for w a r d v o l t ag e - a l l p r o duc ts 0 5 10 15 20 25 30 0.0 0 . 5 1.0 1 . 5 2.0 2 . 5 3.0 3 . 5 4.0 4 . 5 5.0 vf ( v ) if (ma ) 5
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